Skip to main content
Conference ProceedingsOPEN ACCESS

Cross-sectional STM study of impurity states in diluted magnetic semiconductor (Zn,Cr)Te

AIP Conference Proceedings (2013) 1566 331-332
DOI: 10.1063/1.4848420
0Citations
Citations of this article
7Readers
Mendeley users who have this article in their library.
Get full text

Abstract

We performed cross-sectional scanning tunneling microscopy / spectroscopy (STM/STS) measurement on multi-layered structure (Zn0.97,Cr 0.03)Te / buffer undoped ZnTe / substrate p-ZnTe. The result of STS measurements on (Zn,Cr)Te clearly showed the existence of Cr impurity states at a deep position within the band-gap of the host ZnTe. © 2013 AIP Publishing LLC.

Author supplied keywords

Cite

CITATION STYLE

APA

Kanazawa, K., Yoshida, S., Shigekawa, H., & Kuroda, S. (2013). Cross-sectional STM study of impurity states in diluted magnetic semiconductor (Zn,Cr)Te. In AIP Conference Proceedings (Vol. 1566, pp. 331–332). American Institute of Physics Inc. https://doi.org/10.1063/1.4848420

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free