An approach to study the effect of the band tail widths on the photovoltaic performance of p-i-n a-Si: H solar cells

7Citations
Citations of this article
8Readers
Mendeley users who have this article in their library.
Get full text

Abstract

The relationship between band tail widths and photovoltaic performance of a p-i-n a-Si: H solar cell is investigated. It is found that the primary effect of the bandgap states is to increase the forward current of the cell and to reduce the voltage output. The influence of the bandgap states and cell thickness on the efficiency of an a-Si: H cell is also determined. An optimum design for a p-i-n type a-Si: H solar cell is discussed using the optical admittance analysis method. © 1993.

Cite

CITATION STYLE

APA

Zhu, F., & Singh, J. (1993). An approach to study the effect of the band tail widths on the photovoltaic performance of p-i-n a-Si: H solar cells. Journal of Non-Crystalline Solids, 163(1), 65–73. https://doi.org/10.1016/0022-3093(93)90646-F

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free