The relationship between band tail widths and photovoltaic performance of a p-i-n a-Si: H solar cell is investigated. It is found that the primary effect of the bandgap states is to increase the forward current of the cell and to reduce the voltage output. The influence of the bandgap states and cell thickness on the efficiency of an a-Si: H cell is also determined. An optimum design for a p-i-n type a-Si: H solar cell is discussed using the optical admittance analysis method. © 1993.
Zhu, F., & Singh, J. (1993). An approach to study the effect of the band tail widths on the photovoltaic performance of p-i-n a-Si: H solar cells. Journal of Non-Crystalline Solids, 163(1), 65–73. https://doi.org/10.1016/0022-3093(93)90646-F