Junctionless Electric-Double-Layer Thin-Film Transistors with Logic Functions

Abstract

Herein, junctionless thin-film transistors (TFT) with indium-oxide (In2O3) as the n-channel active layer are prepared on transparent substrates by magnetron sputtering at room temperature. Chitosan with an electric-double-layer (EDL) effect as a gate dielectric enables the device to achieve low-voltage operation, thus reducing energy consumption. The device maintains its performance in dark or illuminated conditions and has good performance with a mobility of 0.21 cm2 V−1s−1, a current on/off ratio of 6.5 × 106, and a subthreshold swing of 66 mV decade−1. The device implements “OR” and “AND” logic functions at different voltage levels. The In2O3 TFT is ideally suited for prospective applications in large-area electronics and flexible electronics due to its exceptional device performance and low fabrication temperature.