Abstract
Remarkable improvement of cycling endurance and working voltage variance has been achieved by the addition of a trace amount of a [bmim][Tf2N] solution containing Cu(Tf2N)2 to the HfO2 film layer of a CB-RAM with a Cu/HfO2/Pt structure.
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CITATION STYLE
APA
Harada, A., Yamaoka, H., Watanabe, K., Kinoshita, K., Kishida, S., Fukaya, Y., … Itoh, T. (2015). Copper ion-containing ionic liquids provide improved endurance and switching voltage distributions of conducting-bridge random access memory. Chemistry Letters, 44(11), 1578–1580. https://doi.org/10.1246/cl.150773
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