3-D X-ray imaging with nanometer resolution for advanced semiconductor packaging FA

Abstract

As the complexity and interconnect density of advanced semiconductor packages increase, failure analysis and root cause determination are also facing new challenges and higher requirements. The 3-D X-ray microscopy, enabling nondestructive defect imaging and enhanced navigation for failure analysis, is considered a key method to fulfill these requirements. This technique results in a short time to result and high success failure analysis yield. After a short introduction into the basic principles of laboratory-based X-ray tomography, two different approaches of X-ray investigations are discussed. The author demonstrates the capabilities of the individual techniques and gives an outlook into future failure analysis opportunities. This includes the recently developed application using 3-D X-ray imaging for back-end-of-line and chip-package-interaction features.