In-depth agglomeration of d -metals at Si-on-Mo interfaces

Abstract

Reflective Si/Mo multilayer mirrors with protective d -metal surfaces onto a range of upper Mo and Si layer thicknesses have been grown with physical vapor deposition and investigated on diffusion and in-depth compound formation. Laterally inhomogeneous upward Si and downward d -metal diffusion occurs through Mo layers up to 2 nm thickness. Especially Ru and Rh agglomerate and form silicides such as Ru2 Si3 and Rh2 Si not in the midst of the Si layer but at the Si/Mo interface. This appears to be mediated by MoSi2 presence at the Si/Mo interface that acts as precursor via better lattice compatibility and lowering of formation energy. © 2009 American Institute of Physics.