Abstract
The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. The experimental results obtained in an 810 nm, 200 μm wide GaAlAs amplifier show good agreement with the theory. © 2007 Optical Society of America.
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CITATION STYLE
APA
Chi, M., Jensen, S. B., Huignard, J. P., & Petersen, P. M. (2007). Two-wave mixing in a broad-area semiconductor amplifier. In Optics InfoBase Conference Papers. Optical Society of America. https://doi.org/10.1364/oe.14.012373
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