Abstract
A theoretical investigation is made of the laser gain associated with interband transitions in heavily doped semiconductors. Analytic expressions are obtained for the gain and quasi-Fermi levels considered as a function of the impurity concentration, temperature, and pumping power.
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CITATION STYLE
APA
Aleksanyan, A. G., Polue’ktov, I. A., & Popov, Y. M. (1974). THEORY OF SEMICONDUCTOR LASERS. Sov J Quantum Electron, 4(1), 32–35. https://doi.org/10.1007/978-3-642-74951-3_24
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