Monte Carlo Study of Coupled SO Scattering in Si MOSFETs with High κ- Dielectric Gate Stacks: Hot Electron and Disorder Effects

J. R. Barker; J. R. Watling; A. Brown; S. Roy; P. Zeitzoff; G. Bersuker; A. Asenov

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Monte Carlo Study of Coupled SO Scattering in Si MOSFETs with High κ- Dielectric Gate Stacks: Hot Electron and Disorder Effects

Barker J
Watling J
Brown A
et al.

Springer Berlin Heidelberg, (2007), 115-119

DOI: 10.1007/978-3-540-36588-4_25

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Abstract

A Monte Carlo scheme is described for simulating electron-phonon-plasmon scattering in realistic high-x gate stack Si MOSFETs that accounts for hot electron effects, modulation of the electron-phonon-plasmon scattering rates by the interface boundary roughness and inhomogeneity of the dielectric layers.

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Barker, J. R., Watling, J. R., Brown, A., Roy, S., Zeitzoff, P., Bersuker, G., & Asenov, A. (2007). Monte Carlo Study of Coupled SO Scattering in Si MOSFETs with High κ- Dielectric Gate Stacks: Hot Electron and Disorder Effects. In Nonequilibrium Carrier Dynamics in Semiconductors (pp. 115–119). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_25

Monte Carlo Study of Coupled SO Scattering in Si MOSFETs with High κ- Dielectric Gate Stacks: Hot Electron and Disorder Effects

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