Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations

Abstract

The double quantum well structure, composed of GaAs/AlGaAs doped with silicon atoms, was investigated was analyzed under varying temperature and axial pressure conditions by simultaneously numerically resolving the Schrödinger and Poisson equations. Subsequently, the effects of pressure and temperature were found to significantly influence electron probability distribution, energy levels, Fermi energy, and electron density for both scenarios: a single doped quantum well and two doped quantum wells. An increase in pressure or temperature causes the energy levels to shift to lower values, and the electron becomes less localized within the confinement region. We hope that our simulation results will be utilized by investors to fabricate electronic devices capable of operating under varying external pressures and temperatures.