Electrical properties of bromine doped SnSe2 van der Waals material

Abstract

Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.