Hot electron reaction dynamics at GaAs(100) surface quantum wells

Abstract

The interfacial charge transfer and competing dynamics, relevant to field accelerated electrons, have been characterized. We have measured electron relaxation as a function of energy at high quality GaAs (100) surface quantum wells (QW). It is found to depend on QW doping. In addition, in situ studies of electron transfer from these QWs to outer-sphere acceptors at liquid contacts indicate that the electron capture cross-section is comparable to the molecular cross-section. These combined studies provide parameters to make the hot electron transfer channel competitive with electron relaxation, thereby supporting the hot electron model.