Amorphous TeO2 as p-type oxide semiconductor for device applications

Abstract

Electronic devices would benefit from a low-cost amorphous, dopable, bipolar oxide semiconductor. However, p-type oxides are quite rare, largely due to self-compensation by native defects. Our simulations find that the amorphous phase of TeO2 is chemically ordered, forms shallow, uncompensated acceptor substitutional AsTe and NO centers, and uses materials that are processable at low temperatures.