Defect Distribution of CuInS 2 Solar Cells from Different Preparation Processes as Determined by Admittance Spectroscopy

Abstract

Admittance spectroscopy measurements are carried out to determine the defect spectra of CuInS 2 solar cells from different preparation methods. Different defects are found and partly interpreted in terms of interface and bulk defects with the help of annealing experiments and DLTS measurements. A correlation between defect spectrum and open-circuit voltage is found. We further examine the origin of series resistances that influence the measurement of capacitance.