InGaAs self-switching diode-based THz bridge rectifier

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Abstract

Here, an In0.53Ga0.47As-based self-switching diode bridge rectifier (SSDBR) is presented utilizing Silvaco TCAD computer simulations. A zero-bias self-switching diode exhibiting nonlinear current-voltage characteristics has been utilized for the device design. The output current, threshold voltage and maximum operating frequency of the device can be easily tuned by adjusting the channel width and length of the SSD, whereas the properties of conventional rectifiers are typically material-dependent. The AC and DC characteristics of the SSDBR are presented, demonstrating full wave rectification up to frequencies of 0.240 THz with a noise-equivalent power of 39.90 pW (Hz1/2)-1. Furthermore, the simulated results are validated by developing an analytical model for an InGaAs-based SSDBR.

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Garg, S., Kaushal, B., Kasjoo, S. R., Kumar, S., Gupta, N., Song, A., & Singh, A. K. (2021). InGaAs self-switching diode-based THz bridge rectifier. Semiconductor Science and Technology, 36(7). https://doi.org/10.1088/1361-6641/abffe0

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