Simulation study of 4H-SiC trench insulated gate bipolar transistor with low turn-off loss

Abstract

In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. By adjusting the doping concentration on both sides of the heterojunction, the turn-off loss is further reduced without sacrificing other characteristics of the device. The electrical characteristics of the device were simulated through the Silvaco ATLAS 2D simulation tool and compared with the traditional structure to verify the design idea. The simulation results show that, compared with the traditional structure, the turn-off loss of the proposed structure was reduced by 58.4%, the breakdown voltage increased by 13.3%, and the forward characteristics sacrificed 8.3%.