An E-band transformer-based 90-nm CMOS LNA

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This paper present an E-band transformer-based three-stage low-noise amplifier (LNA) in 90-nm CMOS process. The common-source (CS) and cascode configuration are selected to achieve high gain and low noise requirements in LNA design. A noise reduction technique is utilized to suppress the extra noise induced by cascode configuration. For impedance transformation and compact chip area, transformers are utilized in the inter-stage and output matching. This LNA demonstrates a 20.2-dB gain and a noise figure (NF) of 8.8 dB at 67 GHz with a compact chip size of 0.38 mm2. The dc power is 15.4 mW.




Tsai, J. H., Hung, C. C., Cheng, J. H., Lin, C. F., & Chang, R. A. (2019). An E-band transformer-based 90-nm CMOS LNA. In Asia-Pacific Microwave Conference Proceedings, APMC (Vol. 2018-November, pp. 660–662). Institute of Electrical and Electronics Engineers Inc.

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