An E-band transformer-based 90-nm CMOS LNA

1Citations
Citations of this article
1Readers
Mendeley users who have this article in their library.
Get full text

Abstract

This paper present an E-band transformer-based three-stage low-noise amplifier (LNA) in 90-nm CMOS process. The common-source (CS) and cascode configuration are selected to achieve high gain and low noise requirements in LNA design. A noise reduction technique is utilized to suppress the extra noise induced by cascode configuration. For impedance transformation and compact chip area, transformers are utilized in the inter-stage and output matching. This LNA demonstrates a 20.2-dB gain and a noise figure (NF) of 8.8 dB at 67 GHz with a compact chip size of 0.38 mm2. The dc power is 15.4 mW.

Cite

CITATION STYLE

APA

Tsai, J. H., Hung, C. C., Cheng, J. H., Lin, C. F., & Chang, R. A. (2019). An E-band transformer-based 90-nm CMOS LNA. In Asia-Pacific Microwave Conference Proceedings, APMC (Vol. 2018-November, pp. 660–662). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.23919/APMC.2018.8617616

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free