Room-temperature lasing at 1.82 μm of GaInSbAlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array

Abstract

The authors report the device characteristics of GaInSbAlGaSb quantum well (QW) lasers monolithically grown on GaAs substrates. The 7.8% lattice mismatch between GaAs substrates and GaSb buffer layers can be completely accommodated by using an interfacial misfit (IMF) array. Room-temperature lasing operation is obtained from a 1.25-mm -long device containing six-layer Ga0.9 In0.1 Sb Al0.35 Ga0.65 Sb QWs at 1.816 μm with a threshold current density of 1.265 kA cm2. The observed characteristic temperature and temperature coefficient are 110 K and 9.7 ÅK, respectively. This IMF technique will enable a wide range of lasing wavelengths from near-infrared to midwavelength-infrared regimes on a GaAs platform. © 2007 American Institute of Physics.