Abstract
We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spd-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilibrium-Green-function formalism. We calculate the voltage drop through the contacts and find the main drop located near the negative electrode. We argue that this is due to the filled d-state resonances. The conduction is analyzed in terms of transmission eigenchannels and density of states of the eigenchannels projected onto tight-binding orbitals. We find a single almost fully transmitting channel with mainly s character for low bias while for high bias this channel becomes less transmitting and additional channels involving only d orbitals start to conduct. ©1999 The American Physical Society.
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CITATION STYLE
Brandbyge, M., Kobayashi, N., & Tsukada, M. (1999). Conduction channels at finite bias in single-atom gold contacts. Physical Review B - Condensed Matter and Materials Physics, 60(24), 17064–17070. https://doi.org/10.1103/physrevb.60.17064
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