Substrate-transfer technique using h-BN for GaN-based high-power transistors

Abstract

We transferred AlGaN/GaN (aluminum gallium nitride/gallium nitride) high electron mobility transistors from a sapphire substrate to a material with high thermal conductivity using a substratetransfer technique that involves the use of an h-BN (hexagonal boron nitride) release layer. We succeeded in suppressing the self-heating effect and obtained good power performance in direct current characteristics. The transfer technique can overcome thermal problems in power transistors.