Abstract
Strong photoluminescence is observed in strained GaInP quantum wells (QW) grown on GaP. Variable temperature photoluminescence indicates that the pseudomorphic quantum well consists of type-I regions of ordered GaInP and type-II regions of disordered GaInP. Observation of photoluminescence at room temperature suggests that this QW may be useful as an active layer for laser structures grown on GaP. © 1996 American Institute of Physics.
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CITATION STYLE
APA
Lee, J. W., Schremer, A. T., Fekete, D., & Ballantyne, J. M. (1996). GaInP/GaP partially ordered layer type-1 strained quantum well. Applied Physics Letters, 69(27), 4236–4238. https://doi.org/10.1063/1.116956
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