XPS study of MoO 3 interlayer between aluminum electrode and inkjet-printed zinc tin oxide for thin-film transistor

Abstract

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide (MoO 3) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo 3d 3 and 3d 5 doublets, three different Al 2p core levels, two Sn 3d 5, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy. © 2011 KIEEME. All rights reserved.