Structural and electrical characteristics of solution-processed copper oxide films for application in thin-film transistors

Abstract

In this study, we investigated the effect of the annealing time of copper oxide (CuO) on the morphological and chemical characteristics of films and the electrical properties of bottom-gate/top-contact CuO thin-film transistors (TFTs). Thermogravimetric analysis showed that thermal annealing at 600 ℃ for 30 min and 3 h resulted in the formation of CuO films. The CuO films were analyzed by X-ray diffraction, X-ray photoemission spectroscopy, absorbance determination, and Raman spectroscopy. As the annealing time of the CuO film was increased, the composition of the films changed from Cu(OH) 2 to CuO. Considering the overall TFT performance, the optimal annealing time in solution-processed CuO semiconductors was determined to be 3 h. These results suggest that the annealing time is crucial in modulating the chemical characteristics of solution-processed CuO thin films and the TFT performance.