A graphene-InGaN Schottky junction has been successfully fabricated by transferring graphene layers onto n-type In0.23Ga0.77N/GaN/Al2O3 substrates. Current-voltage (I-V) measurement across the junction demonstrates the rectifying behaviour. Temperature dependent I-V characteristics in a range of 10 K to 300 K reveal that the charge transport mechanism is dominated by thermionic emission. Also, it is observed that the charge-transfer induced variation of Fermi energy of graphene affects the flow of current. This graphene/InGaN junction shows electroluminescence (EL) characteristics under a forward bias, producing bright blue emission (430 nm) at room temperature. As the temperature increases, the EL peak is shifted to a lower energy with a reduced peak intensity due to the increased nonradiative recombination rate. The dependence of EL intensity on the current of the graphene/InGaN junction confirms the band-to-band recombination mechanism in the InGaN layer by the bimolecular radiative recombination. Therefore, the observed results provide an insight for implementing graphene based Schottky-junction devices with tunable emission by utilizing the variable bandgap of the InGaN layer.
CITATION STYLE
Cho, H. D., Yoon, I. T., Yuldashev, S. U., Kang, T. W., Kim, D. Y., & Lee, J. K. (2017). Electroluminescence in a rectifying graphene/InGaN junction. RSC Advances, 7(80), 50853–50857. https://doi.org/10.1039/c7ra10672f
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