Hybridization at Superconductor-Semiconductor Interfaces

Abstract

Hybrid superconductor-semiconductor devices are currently one of the most promising platforms for realizing Majorana zero modes. Their topological properties are controlled by the band alignment of the two materials, as well as the electrostatic environment, which are currently not well understood. Here, we seek to fill in this gap and address the role of band bending and superconductor-semiconductor hybridization in such devices by analyzing a gated single Al-InAs interface using a self-consistent Schrödinger-Poisson approach. Our numerical analysis shows that the band bending leads to an interface quantum well, which localizes the charge in the system near the superconductor-semiconductor interface. We investigate the hybrid band structure and analyze its response to varying the gate voltage and thickness of the Al layer. This is done by studying the hybridization degrees of the individual subbands, which determine the induced pairing and effective g factors. The numerical results are backed by approximate analytical expressions which further clarify key aspects of the band structure. We find that one can obtain states with strong superconductor-semiconductor hybridization at the Fermi energy, but this requires a fine balance of parameters, with the most important constraint being on the width of the Al layer. In fact, in the regime of interest, we find an almost periodic dependence of the hybridization degree on the Al width, with a period roughly equal to the thickness of an Al monolayer. This implies that disorder and shape irregularities, present in realistic devices, may play an important role for averaging out this sensitivity and, thus, may be necessary for stabilizing the topological phase.