Book Chapter

High-Speed III-V Semiconductor Devices

  • Li S
Springer New York, (2007), 613-663
DOI: 10.1007/0-387-37766-2_16
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Abstract

In this chapter the basic device physics, operational principles, and general characteristics of high-speed III-V compound semiconductor devices such as MESFETs and HEMTs are presented. The devices described here include GaAs- and InPbased metal–semiconductor...

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APA

Li, S. S. (2007). High-Speed III-V Semiconductor Devices. In Semiconductor Physical Electronics (pp. 613–663). Springer New York. https://doi.org/10.1007/0-387-37766-2_16

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