The physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by X-ray photoelectron spectroscopy with high kinetic energies (HAXPES). Comparative analysis of Si/SiO2/HfO2/TiN-TiAl-TiN and Si/SiO2/HfO2/TiN stacks reveals identical composition of the HfO2/TiN interfaces in both stacks. It was established that the EWF decrease for TiN/TiAl/TiN laminate electrode with respect to the "normal"value for TiN is related to redistribution of light N and O atoms in the bulk of TiN/TiAl/TiN instead of frequently supposed Al diffusion and formation of HfAlOx mixed oxide at the HfO2/TiN interface. Formation of nonstoichiometric TiNx, metallic Ti and Al, and AlN in the bulk of TiN/TiAl/TiN was revealed by HAXPES.
CITATION STYLE
Konashuk, A. S., Filatova, E. O., Sakhonenkov, S. S., Kolomiiets, N. M., & Afanas’Ev, V. V. (2020). Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2with Laminate TiN/TiAl/TiN Electrodes. Journal of Physical Chemistry C, 124(29), 16171–16176. https://doi.org/10.1021/acs.jpcc.0c04183
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