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Origin of the Negative Differential Resistance in the Output Characteristics of a Picene-Based Thin-Film Transistor

IEEE Journal of the Electron Devices Society (2020) 8 391-395
DOI: 10.1109/JEDS.2020.2965213
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Abstract

In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm2/ \text{V}\cdot \text{s}) and on/off ratios above 10^{5} the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.

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Ros, E., Puigdollers, J., Ortega, P., & Voz, C. (2020). Origin of the Negative Differential Resistance in the Output Characteristics of a Picene-Based Thin-Film Transistor. IEEE Journal of the Electron Devices Society, 8, 391–395. https://doi.org/10.1109/JEDS.2020.2965213

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