Phosphorous doping in beta-irondisilicide by co-sputtering method

Abstract

We prepared phosphorous-doped n-type beta-irondisilicide (β-FeSi2) thin films by co-sputtering followed by thermal annealing method using Si, Fe and Fe3P as sputtering source. Phosphorous doping changed the conductivity of beta-irondisilicide films from p-type to n-type. In addition, the resistivity decreased with phosphorous doping by more than one order. However, the structure of the films changed to FeSi at the higher doping levels. © 2002 Elsevier Science B.V. All rights reserved.