Abstract
We report the fabrication of InP/In0.53Ga0.47As based short wave infrared photodetector for remote sensing application. Smooth and vertical sidewalls in the mesa isolation of the diodes using wet etching are observed with etch depth of more than 2.2 lm. Ohmic contact to heavily doped n-type InGaAs by depositing Ti/Pt/ Au metal layer is formed using electron beam evaporation and showed the specific contact resistance of 3 10−7 Ω-cm2. InGaAs based detector arrays are fabricated in the 640 512 matrix with 25 lm 25 lm detector pitch.
Cite
CITATION STYLE
Singh, A., Jain, S., Kumar, A., & Agarwal, V. R. (2019). Ingaas based short-wave infrared p-i-n photodetector. In Springer Proceedings in Physics (Vol. 215, pp. 1083–1087). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-319-97604-4_166
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
