Abstract
Mixed-dimensional heterostructures combine the merits of materials of different dimensions; therefore, they represent an advantageous scenario for numerous technological advances. Such an approach can be exploited to tune the physical properties of two-dimensional (2D) layered materials to create unprecedented possibilities for anisotropic and high-performance photonic and optoelectronic devices. Here, we report a new strategy to engineer the light-matter interaction and symmetry of monolayer MoS2by integrating it with one-dimensional (1D) AlGaAs nanowire (NW). Our results show that the photoluminescence (PL) intensity of MoS2increases strongly in the mixed-dimensional structure because of electromagnetic field confinement in the 1D high refractive index semiconducting NW. Interestingly, the 1D NW breaks the 3-fold rotational symmetry of MoS2, which leads to a strong optical anisotropy of up to ∼60%. Our mixed-dimensional heterostructure-based phototransistors benefit from this and exhibit an improved optoelectronic device performance with marked anisotropic photoresponse behavior. Compared with bare MoS2devices, our MoS2/NW devices show ∼5 times enhanced detectivity and ∼3 times higher photoresponsivity. Our results of engineering light-matter interaction and symmetry breaking provide a simple route to induce enhanced and anisotropic functionalities in 2D materials.
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Shafi, A. M., Ahmed, F., Fernandez, H. A., Uddin, M. G., Cui, X., Das, S., … Lipsanen, H. (2022). Inducing Strong Light-Matter Coupling and Optical Anisotropy in Monolayer MoS2with High Refractive Index Nanowire. ACS Applied Materials and Interfaces, 14(27), 31140–31147. https://doi.org/10.1021/acsami.2c07705
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