Controlled one step thinning and doping of two-dimensional transition metal dichalcogenides

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have drawn intensive attention due to their ultrathin feature with excellent electrostatic gating capability, and unique thickness-dependent electronic and optical properties. Controlling the thickness and doping of 2D TMDCs are crucial toward their future applications. Here, we report an effective HAuCl4 treatment method and achieve simultaneous thinning and doping of various TMDCs in one step. We find that the HAuCl4 treatment not only thins thick MoS2 flakes into few layers or even monolayers, but also simultaneously tunes MoS2 into p-type. The effects of various parameters in the process have been studied systematically, and an Au intercalation assisted thinning and doping mechanism is proposed. Importantly, this method also works for other typical TMDCs, including WS2, MoSe2 and WSe2, showing good universality. Electrical transport measurements of field-effect transistors (FETs) based on MoS2 flakes show a big increase of On/Off current ratios (from 102 to 107) after the HAuCl4 treatment. Meanwhile, the subthreshold voltages of the MoS2 FETs shift from −60 to +27 V after the HAuCl4 treatment, with a p-type doping behavior. This study provides an effective and simple method to control the thickness and doping properties of 2D TMDCs, paving a way for their applications in high performance electronics and optoelectronics.