Silicon introduced effect on resistive switching characteristics of WO X thin films

Abstract

The switching layer with Si interfusion is investigated to improve the electrical characteristics of WO X resistance random access memory (RRAM). The WO X has attracted extensive attention for RRAM because it can form by converting the surface of the W-plug with a current complementary metal oxide semiconductor (CMOS) compatible thermal oxidation process. In general, the resistance switching behavior of WO X-RRAM devices is unstable because the diverse oxidation state provided the stochastic conduction paths. In this research, the Si interfusion can effectively localize the filament conduction path in WO X resistance switching layer because the tungsten filament path is limited by SiO X in the WSiO X film during the forming process. © 2012 American Institute of Physics.