In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
Cheng, C. H., Lin, M. H., Chen, H. Y., Fan, C. C., Liu, C., Hsu, H. H., & Chang, C. Y. (2019, May 1). Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors. Physica Status Solidi - Rapid Research Letters. Wiley-VCH Verlag. https://doi.org/10.1002/pssr.201800573