In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO (In2O3 90wt%, SnO210wt%) target and an AZO (ZnO 98wt%, Al2O3 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX). © 2011 KIEEME.
CITATION STYLE
Hong, J. S., & Kim, K. H. (2011). Characteristic of Al-In-Sn-ZnO thin film prepared by FTS system with hetero targets. Transactions on Electrical and Electronic Materials, 12(2), 76–79. https://doi.org/10.4313/TEEM.2011.12.2.76
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