Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices

Abstract

Gallium nitride (GaN) offers exceptional material properties, making it indispensable in communications, defense, and power electronics. With high electron mobility and robust thermal conductivity, GaN-based devices excel in high-frequency, high-power applications. They are vital in wireless communication systems, radar, electronic warfare, and power electronics systems, offering superior performance, efficiency, and reliability. Further research is crucial for optimizing GaN-based devices performance and expanding their applications, driving innovation across industries. The application of ion implantation technology in GaN-based devices is a key process that can be used to improve device performance and characteristics, which enables process aspects such as electrical isolation, ion implantation for ohmic contacts, threshold voltage regulation, and terminal design. In this paper, we will focus on reviewing the principles and issues of the ion implantation process in GaN-based device preparation. This work aims to serve as a guide for ion implantation in future GaN-based devices.