Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications

Abstract

The self-assembly technique of forming three-dimensional islands in the growth of highly strained semiconductor heterostructures has emerged as a powerful technique for the realization of an ordered array of quantum dots. Such quantum dots have been incorporated into the active region of optoelectronic and microelectronic devices in the hope of improving device performance or engineering new ones. Here we present the growth, optical characterization, and device applications for self-assembled InGaAs/GaAs quantum dots.