Magnetoelectric Control of Antiferromagnetic Domain of Cr 2 O 3 Thin Film Toward Spintronic Application

Abstract

Cr2O3 is a magnetoelectric antiferromagnet, and its antiferromagnetic domain state is controllable by the simultaneous application of magnetic and electric fields. In the 2000s, that is, more than 50 years since the discovery of the magnetoelectirc effect in Cr2O3, efforts were initiated apply this effect to engineering applications. In this article, we review the recent progress of the magnetoelectric control of the antiferromagnetic domain state and the related phenomena of Cr2O3, in particular, in an all-thin film system, an essential step to the application.