Preferential geminal bis-silylation of 3,4-benzothiophane is caused by the dominance of electron withdrawal by R3Si over steric shielding effects

4Citations
Citations of this article
8Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

Benzylic C-H lithiation of 3,4-benzothiophane and subsequent treatment with triphenyl- or trimethylchlorosilane under a variety of conditions leads to α,α- rather than α,α-bis-silylation products as a consequence of anion stabilization by R3Si and very fast deprotonation of the intermediate monosilylated product, even with a sterically bulky base such as lithium diisopropylamide.

Cite

CITATION STYLE

APA

Han, Y., Ma, Y., Keresztes, I., Collum, D. B., & Corey, E. J. (2014). Preferential geminal bis-silylation of 3,4-benzothiophane is caused by the dominance of electron withdrawal by R3Si over steric shielding effects. Organic Letters, 16(17), 4678–4679. https://doi.org/10.1021/ol502348y

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free