Infrared reflection characteristics in InN thin films grown by magnetron sputtering for the application of plasma filters

Abstract

We study the IR reflection characteristics (400-10000cm -1) of InN thin films grown by radio frequency magnetron sputtering on GaAs (111) substrates. The plasma oscillation, carrier concentration, and mobility are obtained and discussed by calculating the IR reflection spectra. The suitability of InN thin films for the application of plasma filters has been revealed by investigating the performance of InN plasma filters with different carrier concentration, mobility, and film thickness. Two InN plasma filters have been designed for the widely used GaSb and GaInAsSb photovoltaic cells in thermophotovoltaic systems, which show good performance. The advantages of InN thin film as plasma filter material over the conventional transparent conducting oxides and heavily doped Si materials have also been discussed. © 2002 American Institute of Physics.