Journal Article

Resistive switching like-behavior in FD-SOI Ω-gate transistors

Solid-State Electronics (2023) 209
DOI: 10.1016/j.sse.2023.108759
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Abstract

In this work, the Resistive switching (RS) phenomenon is experimentally investigated in N-type FDSOI Ω-gate NW-FETs with high-k dielectric. The location along the channel of the conductive filament through the device dielectric during switching is analyzed. Finally, the effects of RS on the characteristic transistor curves are also presented.

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APA

Valdivieso, C., Rodriguez, R., Crespo-Yepes, A., Martin-Martinez, J., & Nafria, M. (2023). Resistive switching like-behavior in FD-SOI Ω-gate transistors. Solid-State Electronics, 209. https://doi.org/10.1016/j.sse.2023.108759

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