Temperature-Insensitive Ka-Band Transceiver With Ultralow-Noise Self-Calibrated Low Dropout Regulator in 65-nm CMOS

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Abstract

This article proposes a Ka-band transceiver with an integrated local oscillator (LO) generator and multiple low dropout regulators (LDOs) to eliminate the strict requirements to the external power supply network. The proposed self-calibrated LDO eliminates the use of a bandgap reference circuit and its large flicker noise contribution in traditional power regulators to achieve ultralow-noise performance. The output of the proposed LDO is self-calibrated with temperature and process variations by autoconfiguring the feedback coefficient through a digital loop to guarantee the stable performance of its loaded high-speed circuits. The stable gain and output power of the transceiver with temperature variation are achieved by on-chip multiple self-compensation schemes, which include a self-sensing LDO for the power amplifier, a constant- G_{!m} bias circuit for the amplification stages, and the temperature-compensated intermediate-frequency amplifiers (TC IFAs) with proportional-to-absolute-temperature (PTAT) gain to further compensate for the gain deviation caused by the second-order effect and large-signal performance difference. Implemented in 65-nm CMOS technology, measurements indicate that the output noise of the proposed LDO is as low as 15 nV/sqrt (Hz) at 10-kHz offset and the integrated power network greatly reduces the noise influence on the LO signal compared with the traditional bandgap-referenced LDO. Furthermore, due to the adoption of the proposed temperature compensation scheme, the small-signal gains of the receiver and transmitter only fluctuate by 1.1 and 1.3 dB from - 40,,^{circ}text{C} to 85~^{circ}text{C} , respectively, and the output saturated power of the transmitter varies by 0.7 dBm over the entire temperature range.

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APA

Ding, C., Zhang, T., Fan, C., Jiang, D., Tao, J., & Ye, S. (2023). Temperature-Insensitive Ka-Band Transceiver With Ultralow-Noise Self-Calibrated Low Dropout Regulator in 65-nm CMOS. IEEE Transactions on Microwave Theory and Techniques, 71(2), 640–653. https://doi.org/10.1109/TMTT.2022.3215958

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