Experimental Optimization and Theoretical Simulation of High Performance Field-effect Transistors Based on Multilayer Tungsten Diselenide

Abstract

The field-effect transistors（FETs）were prepared based on high-quality WSe2 nanosheets of different thicknesses by mechanical exfoliation method and the influencing factors of their performance were investigated. By regulating the WSe2 nanosheet and dielectric layer substrate thickness，testing temperature，annealing treatment，combined with theoretical simulation analysis，the best electrical performance of WSe2-FETs was obtained. Finally，the obtained 7-layer WSe2 nanosheets exhibit the most excellent electrical properties with carrier mobility up to 93.17 cm2·V‒1·s‒1 at room temperature and 482.78 cm2·V‒1·s‒1 at low temperature of 78 K.