Abstract
Two electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient spectroscopy (DLTS) with both majority- and minority-carrier injections, and Laplace DLTS spectroscopy. It is concluded that these levels, having donor and acceptor characters, respectively, are correlated with interstitial Ga atoms, formed by the Watkins-replacement mechanism via self-interstitials. © 2008 The American Physical Society.
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CITATION STYLE
Kolkovsky, V., Petersen, M. C., Mesli, A., Van Gheluwe, J., Clauws, P., & Larsen, A. N. (2008). Gallium interstitial in irradiated germanium: Deep level transient spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 78(23). https://doi.org/10.1103/PhysRevB.78.233201
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