Fabrication and properties of the photosensitive anisotype n-CdxZn1-xO/p-CdTe heterojunctions

Abstract

We have fabricated photosensitive anisotype n-Cdx Zn1-x O/p-CdTe heterojunctions by a deposition of Cd0:5 Zn0:5 O -lm onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. n-Cdx Zn1-x O/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.