Epitaxial growth of III-Nitride layers on aluminum nitride substrates

Abstract

High quality, epitaxial growth of AlN and AlxGa1-xN by OMVPE has been demonstrated on single-crystal AlN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [101̄0] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.