Abstract
This paper presents a computationally efficient 3-D simulation approach for the dynamic electrothermal analysis of SiC power MOSFETs. The strategy relies on a circuit representation of the whole device, where the electrothermal feedback is enabled through an equivalent electrical network, and the elementary device cell is described by a novel behavioral model accounting for the non-intuitive temperature dependences of key physical parameters. © 2014 IEEE.
Cite
CITATION STYLE
D’Alessandro, V., Magnani, A., Riccio, M., Breglio, G., Irace, A., Rinaldi, N., & Castellazzi, A. (2014). SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 285–288). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISPSD.2014.6856032
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