Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy

Abstract

Spin-polarized currents represent an efficient tool for manipulating ferromagnetic nanostructures but the critical current density necessary for the magnetization switching is usually too high for applications. Here we show theoretically that, in magnetic tunnel junctions having electric-field-dependent interfacial anisotropy, the critical density may reduce down to a very low level (∼10 4 â.A cm-2) when the junction combines small conductance with the proximity of free layer to a size-driven spin reorientation transition. The theory explains easy magnetization switching recently discovered in CoFeB/MgO/CoFeB tunnel junctions, surprisingly showing that it happens when the spin-transfer torque is relatively small, and provides a recipe for the fabrication of magnetic tunnel junctions suitable for industrial memory applications.