Synthesis and structural characterization of vertical ferromagnetic MnAs/semiconducting InAs heterojunction nanowires

Abstract

The purpose of this study is to synthesize vertical ferromagnetic/semiconducting heterojunction nanowires by combing the catalyst-free selectivearea growth of InAs nanowires and the endotaxial nanoclustering of MnAs and to structurally and magnetically characterize them. MnAs penetrates the InAs nanowires to form nanoclusters. The surface migration length of manganese adatoms on the nanowires, which is estimated to be 600nm at 580°C, is a key to the successful fabrication of vertical MnAs/InAs heterojunction nanowires with atomically abrupt heterointerfaces.