Low voltage full swing finFET hybrid full adder

Abstract

In this research paper, CMOS and FinFET based hybrid Full Adders operating at low voltages with low power dissipation are proposed. The proposed CMOS based circuit is compared with few existing hybrid full adders in terms of average power dissipation and power-delay-product (PDP). The designed CMOS based hybrid adder achieves lower power dissipation and low PDP compared to other hybrid adders over a voltage range of 0.6V to 1V. The proposed CMOS implementation of hybrid full adder fails at 0.5V to produce full swing output. To solve this full swing problem, the proposed hybrid full adder is implemented using FinFETs which produce full output voltage, lower power and low PDP comparing with CMOS implementation. The circuits are designed with HSPICE tool in 32nm predictive technology model (PTM).